Si/β-FeSi2-particles/Si structures have been fabricated by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si, and the influence of the size of the β-FeSi2 particle and the MBE-Si growth rate for embedding the β-FeSi2 in Si on 1.5-μm photoluminescence (PL) intensity of β-FeSi2 was investigated. The 1.5-μm PL intensity was observed to increase with the size of the β-FeSi2 particle, but the broad background luminescence, ranging from 1.2 to 1.4 μm, also increased. Transmission electron microscopy observation suggested that the broad luminescence was due to the dislocations induced in the Si matrix when the size of the embedded β-FeSi2 particles was too large. Furthermore, the 1.5-μm PL intensity was observed to be strongly affected by MBE-Si growth rate. This is thought to be due to the strain induced in the β-FeSi2 particles upon being embedded in the Si. © 2004 American Institute of Physics.