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Thermal annealing effects on low-frequency noise and transfer behavior in magnetic tunnel junction sensors

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2 Author(s)
Liu, Xiaoyong ; Physics Department, Brown University, Providence, Rhode Island 02912 ; Xiao, Gang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1617355 

We have investigated the low-frequency noise and transfer curve behavior in NiFe/AlOx/NiFe magnetic tunnel junction sensors as a function of the annealing temperature. The magnetoresistance reaches a maximum of 35% with a maximal field sensitivity of 5%/Oe at an optimal annealing temperature of 170 °C. The origin of 1/f noise is explored by measuring the magnetic field dependence of noise at low frequencies. Our data indicate that samples annealed near this temperature exhibit 1/f noise that originates from magnetization fluctuations, whereas electronic noise due to charge trapping is dominant for other temperatures. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 9 )

Date of Publication:

Nov 2003

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