By Topic

All-SrTiO3 field effect devices made by anodic oxidation of epitaxial semiconducting thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Bellingeri, E. ; INFM–Lamia, Corso Perrone 24, 16152 Genova, ItalyDipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy ; Pellegrino, L. ; Marre, D. ; Pallecchi, I.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1613373 

We report a field effect device fully made of strontium titanate (STO). This perovskite-type material is very attractive for oxide electronics both for its notable dielectric properties as well as for its semiconducting properties in the doped state. We exploit both of these properties by developing a field effect device in which oxygen deficient STO acts as a conducting channel and stoichiometric STO as a dielectric barrier. Such a barrier is obtained by electrochemical oxidation of the surface of an oxygen deficient semiconducting STO film, deposited by pulsed laser ablation in ultrahigh vacuum conditions. The channel conductivity is varied by the application of an electric field between the channel itself and a metallic gate deposited onto the dielectric barrier. Modulation capability of more than 60% is achieved by applying potential lower than 1 V. Conductivity changes are due to electrostatic induced variations of the charge carrier density (n). This result is confirmed by Hall effect measurements during gate biasing. The very good agreement of the measured n with the value calculated from the device capacitance proves the electrostatic origin of the effect observed. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 9 )