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All-SrTiO3 field effect devices made by anodic oxidation of epitaxial semiconducting thin films

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5 Author(s)
Bellingeri, E. ; INFM–Lamia, Corso Perrone 24, 16152 Genova, ItalyDipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy ; Pellegrino, L. ; Marre, D. ; Pallecchi, I.
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We report a field effect device fully made of strontium titanate (STO). This perovskite-type material is very attractive for oxide electronics both for its notable dielectric properties as well as for its semiconducting properties in the doped state. We exploit both of these properties by developing a field effect device in which oxygen deficient STO acts as a conducting channel and stoichiometric STO as a dielectric barrier. Such a barrier is obtained by electrochemical oxidation of the surface of an oxygen deficient semiconducting STO film, deposited by pulsed laser ablation in ultrahigh vacuum conditions. The channel conductivity is varied by the application of an electric field between the channel itself and a metallic gate deposited onto the dielectric barrier. Modulation capability of more than 60% is achieved by applying potential lower than 1 V. Conductivity changes are due to electrostatic induced variations of the charge carrier density (n). This result is confirmed by Hall effect measurements during gate biasing. The very good agreement of the measured n with the value calculated from the device capacitance proves the electrostatic origin of the effect observed. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 9 )