By Topic

Current and spin-filtering dual diodes based on diluted magnetic semiconductor heterostructures with a nonmagnetic barrier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhai, Feng ; Department of Physics, Tsinghua UniversityCenter for Advanced Study, Tsinghua University, Beijing 100084, China ; Guo, Yong ; Gu, Bing-Lin

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have investigated the ballistic spin-polarized transport through a diluted magnetic semiconductor heterostructure with the inclusion of a nonmagnetic barrier. It is found that at suitable magnetic fields, the output current of the system exhibits a nearly 100% spin polarization and large values under the forward bias, while under the reverse bias it is small and shows a weak polarization. Such current and spin-filtering dual diode functions are robust under the change of the nonmagnetic barrier width. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 8 )