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Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

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6 Author(s)
Gogneau, N. ; CEA-CNRS-UJF Research Group “Nanophysique et Semiconducteurs,” Département de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France ; Jalabert, D. ; Monroy, E. ; Shibata, T.
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We propose a procedure to grow GaN quantum dots (QDs) on AlN by using the Ga surfactant effect in plasma-assisted molecular beam epitaxy. Self-formed GaN islands were spontaneously generated under vacuum, after evaporation of the Ga bilayer stabilizing the two-dimensional GaN layer grown under Ga-rich conditions. Island characteristics (size and density) are studied as a function of the nominal amount of GaN deposited. We demonstrate that the QD density can be controlled in the 3×1010cm-2–2×1011cm-2 range. It is shown that beyond a given amount of GaN nominally deposited, there is a coexistence between elastic and plastic relaxation, with GaN islands being formed on a partially relaxed two-dimensional GaN layer thicker than two monolayers. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 4 )

Date of Publication:

Aug 2003

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