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Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor

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6 Author(s)
Jimenez, D. ; Departament d’Enginyeria Electrònica, Escola Tècnica Superior d’Enginyeria, Universitat Autònoma de Barcelona, 08193-Bellaterra (Barcelona), Spain ; Saenz, J.J. ; Inı quez, B. ; Sune, J.
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We present a compact model based on the Landauer transmission theory for the silicon quantum wire and quantum well metal-oxide-semiconductor field effect transistor (MOSFET) working in the ballistic limit. This model captures the static current-voltage characteristics in all the operation regimes, below and above threshold voltage. The model provides a basic framework to account for the electronic transport in MOSFETs, being easily adaptable to gate structures such as the double-gate or gate-all-around. Numerical simulations based on the proposed model have been compared with experiments and quantum mechanical self-consistent simulations, with good agreement. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 2 )