By Topic

Hall effect and ionized impurity scattering in Si(1-x)Gex

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kinsler, P. ; Department of Physics, Imperial College, Prince Consort Road, London SW7 2BW, United Kingdom ; Wenckebach, W.T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1622994 

Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si(1-x)Gex is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of K. B. Joelsson, Y. Fu, W. X. Ni, and G. V. Hansson, J. Appl. Phys. 81, 1264 (1997). © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 11 )