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Hall effect and ionized impurity scattering in Si(1-x)Gex

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2 Author(s)
Kinsler, P. ; Department of Physics, Imperial College, Prince Consort Road, London SW7 2BW, United Kingdom ; Wenckebach, W.T.

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Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si(1-x)Gex is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of K. B. Joelsson, Y. Fu, W. X. Ni, and G. V. Hansson, J. Appl. Phys. 81, 1264 (1997). © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 11 )