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Band offset measurements of the GaN (0001)/HfO2 interface

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6 Author(s)
Cook, T.E. ; Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202 ; Fulton, C.C. ; Mecouch, W.J. ; Davis, R.F.
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Photoemission spectroscopy has been used to observe the interface electronic states as HfO2 was deposited on clean n-type Ga-face GaN (0001) surfaces. The HfO2 was formed by repeated deposition of several monolayers of Hf followed by remote plasma oxidation at 300 °C, and a 650 °C densification anneal. The 650 °C anneal resulted in a 0.6 and 0.4 eV change in band bending and valence band offset, respectively. The final annealed GaN/HfO2 interface exhibited a valence band offset of 0.3 eV and a conduction band offset of 2.1 eV. A 2.0 eV deviation was found from the electron affinity band offset model. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 11 )

Date of Publication:

Dec 2003

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