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High-temperature photomodulated thermoreflectance measurements on phosphorus implanted and annealed silicon wafers

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3 Author(s)
Othonos, Andreas ; Photonics and Optoelectronics Research Laboratory, Department of Physics, University of Cyprus, P.O. Box 20537, 1678 Nicosia, Cyprus ; Christofides, Constantinos ; Loizidou, Efi

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Photomodulated thermoreflectance measurements between 300 and 650 K on phosphorus implanted and annealed silicon wafers are reported. The change of the photothermal amplitude and phase as a function of temperature is discussed. Several measurements have been performed on silicon wafers annealed at various temperatures in the range of 300 to 1100 °C. The activation energy of the local annealing process was also estimated to be 0.17 eV. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 11 )

Date of Publication:

Dec 2003

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