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Midinfrared electroluminescence in quantum cascade structures with InP/InGaAs active regions

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8 Author(s)
Troccoli, Mariano ; Division of Engineering and Applied Sciences, Harvard University, 310 Cruft Laboratory, 19 Oxford Street, Cambridge, Massachusetts 02138 ; Capasso, F. ; Chen, Jianxin ; Peabody, Milton L.
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We report on the midinfrared emission from electroluminescent devices with quantum cascade active regions based on InGaAs/InP heterostructures. We observe emission at λ∼12 μm from two different structures and compare their emission characteristics based on the different band structure designs. Their relevance in view of the realization of InP-based quantum cascade lasers with aluminum-free waveguides is discussed. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 11 )