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We report on the midinfrared emission from electroluminescent devices with quantum cascade active regions based on InGaAs/InP heterostructures. We observe emission at λ∼12 μm from two different structures and compare their emission characteristics based on the different band structure designs. Their relevance in view of the realization of InP-based quantum cascade lasers with aluminum-free waveguides is discussed. © 2003 American Institute of Physics.