By Topic

Optically pumped lead–chalcogenide midinfrared lasers on Si substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Kellermann, Klaus ; Thin Film Physics Group, Swiss Federal Institute of Technology, Zürich, Switzerland ; Zimin, Dmitri ; Alchalabi, Karim ; Gasser, Philippe
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1623924 

Double heterostructure (DH) and quantum well (QW) EuSe/PbSe/Pb1-xEuxSe edge-emitting laser structures on Si substrates are grown by molecular-beam epitaxy. They operate up to 250 K when pumped with 870 nm low-cost laser diodes with peak powers of ∼7 W, and emit up to 200 mW peak output power at ∼5 μm wavelength. Differential quantum efficiencies are up to 20%. The threshold powers are limited by Shockley–Read recombination due to the high dislocation densities (108cm-2) in the active layers. Nearly similar maximum operation temperatures were observed when employing (111)—instead of (100)—oriented layers, as well when using QW rather than DH structures. Reduction of dislocation densities to 107cm-2 is feasible and will lead to nearly an order of magnitude lower threshold powers. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 11 )