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Electric-field-induced insulator–metal transition in Pr0.5Ca0.5MnO3 thin films in ramp-type junctions

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3 Author(s)
Murakami, T. ; School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi-gun, Ishikawa 923-1292, Japan ; Sakai, J. ; Imai, S.

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A large decrease in the electrical resistance of the junction was observed with an applied voltage of several volts in small area ramp-type junctions, YBa2Cu3O7-δ/Pr0.5Ca0.5MnO3-z/SrRuO3. The lowest resistivity of the Pr0.5Ca0.5MnO3-z barrier layer attained was ∼100 Ω cm, which is much lower than the previously observed resistivities in the electric-field-induced metallic states in a single crystal of Pr0.7Ca0.3MnO3 or in stacked junctions with a Pr0.5Ca0.5MnO3-z barrier. The lowest resistivity is still much larger than that of the fully ferromagnetic metallic states induced by a magnetic field. However, it was found that the lowest resistivity is not intrinsic and that it is limited by a series resistance caused by the SrRuO3 electrode, including contact resistances. The lower resistivity can be reached using an electrode with a lower resistance. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 10 )

Date of Publication:

Nov 2003

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