By Topic

Enhancement of the recombination rate of Br atoms by CF4 addition and resist etching in HBr/Cl2/O2 plasmas

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Cunge, G. ; Laboratoire des Technologies de la Microelectronique, CNRS-LTM, 17 rue des Martyrs(CEA-LETI), 38054 Grenoble Cedex, France ; Joubert, O. ; Sadeghi, N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1619575 

Mass spectrometry has been used to study the influence of the plasma chamber walls on the recombination rates of halogen atoms in a high density HBr/Cl2/O2/CF4 plasma used for silicon gate etching. In these plasmas, CF4 addition results in a transition from SiOx to CFx layer deposition on the chamber walls. We show that this is accompanied by an important enhancement of the surface recombination rate of halogen atoms (specially Br), whose gas phase concentration consequently drops. The same phenomenon is observed when photoresist is etched in an HBr/Cl2/O2 plasma resulting in carbon coating of the chamber walls. This demonstrates that the recombination coefficient of Br atoms on organic polymer surfaces is much larger than on SiO2-like surfaces, and that significant consequences on gate etch processes are expected. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 10 )