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Solid-phase crystallization behaviors of in situ phosphorous-doped amorphous silicon films deposited using Si2H6 and PH3

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4 Author(s)
Yokoyama, Shigeyuki ; Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama-shi, Kanagawa 223-8522, Japan ; Onizuka, Hisayuki ; Yoshizawa, Yuki ; Kuwano, Hiroshi

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The solid-phase crystallization of in situ phosphorous-doped amorphous silicon films deposited by low-pressure chemical vapor deposition using disilane is studied for various P concentrations and annealing temperatures. The nucleation rate is found to follow a power law with respect to the annealing time. The power index is 1.3 for P concentrations up to about 5×1019cm-3 and decreases slightly at higher P-doping levels. The grain growth rate is enhanced as the P concentration increases, particularly above 1×1019cm-3. The activation energy of the grain growth rate is 2.6 eV regardless of the P concentration. The final grain size in the crystallized films increases markedly for a P concentration over 1×1019cm-3, but is almost independent of the annealing temperature. The crystallization behavior and final grain size can be represented by equations extended from those of Avrami–Johnson–Mehl using the time-dependent nucleation rate. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 1 )