Cart (Loading....) | Create Account
Close category search window
 

Modeling random telegraph signals in the gate current of metal–oxide–semiconductor field effect transistors after oxide breakdown

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Avellan, A. ; Technische Universität Hamburg-Harburg, Institut für Mikroelektronik AB 4-08, D-21071 Hamburg, Germany ; Schroeder, D. ; Krautschneider, W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1579134 

Measurements of random telegraph signals (RTS) in the gate current of n-channel metal–oxide–semiconductor field effect transistors (MOSFETs) after oxide breakdown are presented. Two types of behavior of the time constants and the relative amplitudes of the signals as a function of gate voltage are observed. A theory relating time constants and relative amplitudes of the fluctuations to the energetic and geometric trap location in the oxide is developed. This theory is also applicable to the commonly observed RTS in the drain current of undamaged MOSFETs. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 1 )

Date of Publication:

Jul 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.