By Topic

Filamentation instability in a semiconductor laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Amrita, ; Centre for Energy Studies, Indian Institute of Technology, Delhi, New Delhi, 110016, India ; Sharma, A.K.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In a semiconductor laser, a perturbation in the laser intensity, transverse to the direction of laser propagation, has a tendency to grow. The regions of higher intensity cause higher stimulated emission via electron–hole recombination, hence the electron density falls and gives rise to a higher refractive index. This region attracts power from neighbors causing growth of intensity perturbation. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:94 ,  Issue: 1 )