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Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors

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4 Author(s)
Ito, Daisuke ; Department of Applied Materials Science, Graduate School of Engineering Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka, 599-8531, Japan ; Fujimura, Norifumi ; Yoshimura, Takeshi ; Ito, Taichiro

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Ferroelectric properties of YMnO3 epitaxial films were studied. The ferroelectric properties of epitaxially grown (0001) YMnO3 films on (111)Pt/(0001)sapphire (epi-YMO/Pt) with an excellent crystallinity were compared to (0001)-oriented poly crystalline films on (111)Pt/ZrO2/SiO2/Si. The epi-YMO/Pt had saturated polarization–electric-field (P–E) hysteresis loops, with a remanent polarization (Pr) of 1.7 μC/cm2 and a coercive field (Ec) of 80 kV/cm. The fatigue property showed no degradation up to 1010 measured cycles. These results suggested that the YMnO3 epitaxial films were suitable ferroelectric material for the ferroelectric-gate field-effect transistors. Consequently, epitaxially grown (0001)YMnO3 films on epitaxial Y2O3/Si (epi-YMO/Si) were fabricated. The epi-YMO/Si capacitor had almost equivalent crystallinity compared to epi-YMO/Pt. It was recognized that the epi-YMO/Si capacitor exhibited the ferroelectric type C–V hysteresis loop with the width of the memory window of 4.8 V, which was almost identical to the value of twice coercive voltage of the P–E hysteresis loops of the epi-YMO/Pt. A retention time exceeding 104 s was obtained in the epi-YMO/Si capacitor. © 2003 American Institute of Physics.

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Journal of Applied Physics  (Volume:93 ,  Issue: 9 )