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Determination of the refractive indices of AlN, GaN, and AlxGa1-xN grown on (111)Si substrates

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9 Author(s)
Antoine-Vincent, N. ; LASMEA, UMR 6602 UBP/CNRS, 24 avenue des Landais, F-63177 Aubière cedex, France ; Natali, F. ; Mihailovic, M. ; Vasson, A.
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The refractive indices of several AlxGa1-xN alloys deposited on silicon are determined by ellipsometry and reflectivity experiments at room temperature. The AlGaN layers are grown on (111)Si substrate by molecular-beam epitaxy on top of an AlN/GaN/AlN buffer in order to reduce the strain of the alloy. The Al composition is deduced from energy dispersive x-ray spectroscopy and photoluminescence experiments. The refractive index n and the extinction coefficient k are determined in the 300–600 nm range. For the transparent region of AlxGa1-xN, the refractive index is given in form of a Sellmeier law. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 9 )