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Analysis of multijunction solar cell degradation in space and irradiation induced recombination centers

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6 Author(s)
Zazoui, M. ; Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie (Paris VI), U.M.R. 7603, Tour 22, 4 place jussieu 75252, Paris cedex 05, France ; Mbarki, M. ; Aldin, A.Zin ; Bourgoin, J.C.
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We demonstrate how, using electroluminescence, the parameters characterizing the recombination center induced by irradiation in a solar cell can be measured. Because electroluminescence is able to provide information on an individual cell in a multijunction (MJ) cell device, independently of the others, we apply this technique to measure these parameters in InGaP/GaAs/Ge MJ cells. We then calculate the variations of the open-circuit voltage and short-circuit current of such cells versus fluence. The results are compared with experimental data obtained for 1 MeV electron irradiations. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 9 )