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We demonstrate how, using electroluminescence, the parameters characterizing the recombination center induced by irradiation in a solar cell can be measured. Because electroluminescence is able to provide information on an individual cell in a multijunction (MJ) cell device, independently of the others, we apply this technique to measure these parameters in InGaP/GaAs/Ge MJ cells. We then calculate the variations of the open-circuit voltage and short-circuit current of such cells versus fluence. The results are compared with experimental data obtained for 1 MeV electron irradiations. © 2003 American Institute of Physics.