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Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001)

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5 Author(s)
Dentel, D. ; Laboratoire de Physique et de Spectroscopie Electronique, UMR 7014 CNRS-Université de Haute-Alsace, 4, rue des Frères Lumière, F-68093 Mulhouse Cedex, France ; Bischoff, J.L. ; Kubler, L. ; Stoffel, M.
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Si surfaces manipulated by a carbon (C) pre-deposition have been used to modify the growth morphology of Ge islands. In situ reflection high-energy electron diffraction and x-ray photoelectron diffraction and ex situ atomic force microscopy studies have been conducted for constant C seeding and varying growth temperatures and Ge coverages, with the aim of deepening the understanding of the relevant Ge quantum dot formation. With temperatures ranging from 400 to 600 °C, well structured Ge islands grow in a Volmer–Weber mode as soon as 0.4 ML of C and 1 ML of Ge are deposited. Strongly modified behaviors are nevertheless observed by changing the Ge growth temperature from 500 to 600 °C. By increasing the Ge coverage from 1 to 6 ML at 500 °C, the island height increases at constant density, whereas, at 600 °C, a strong reduction of the density is observed, with a three-dimensional-two-dimensional transition probably due to a partial Ge intermixing in the Si matrix. These different nucleation schemes are connected with varying evolutions of the initial C-related c(4×4) reconstruction. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 9 )

Date of Publication:

May 2003

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