By Topic

Optoelectronic properties of thick SiGe layers grown as small mesas by low pressure chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Stoica, T. ; Institut für Schichten und Grenzflächen (ISG), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany ; Vescan, L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1559636 

Arrays of Si0.80Ge0.20/Si(001) square mesas were epitaxially grown by low pressure chemical vapor deposition to optimize the light emission in the near infrared range. To study the influence of mesa size on light emission the current–voltage characteristics, the spectral photocurrent, and the electroluminescence of p-i-n structures were measured. While the plastic relaxation has a strong influence on the electroluminescence spectra, the current–voltage characteristics are only slightly changed. At low temperatures, a tunneling current was observed and its possible location is discussed. Due to the high SiGe thickness, both the contributions of the no-phonon and transversal optical phonon-assisted transitions to the photocurrent spectra could be observed. Direct evidence of the higher band gap of relaxed SiGe was obtained from electroluminescence studies. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 8 )