By Topic

Electron-beam irradiation of porous silicon: Application to micromachining

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Borini, Stefano ; Istituto Elettrotecnico Nazionale “Galileo Ferraris,” Quantum Res. Laboratory, strada delle Cacce 91, 10135, Turin, Italy ; Amato, Giampiero ; Rocchia, Massimiliano ; Boarino, Luca
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Results on electron irradiation of porous silicon are presented and discussed. An electron-beam lithography system is used to irradiate small surface portions of porous silicon, without the use of any sensitive resists. In this way, it has been possible to write pattern with lateral resolution down to 120 nm. It is suggested that direct exposure to electron irradiation provokes the formation of defects, with an enhanced reactivity of exposed areas. This effect is suggested as a possible way to micro- and nanostructuring of porous silicon. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 8 )