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High CW power (>200 mW/facet) at 3.4 μm from InAsSb/InAlAsSb strained quantum well diode lasers

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3 Author(s)
H. K. Choi ; Lincoln Lab., MIT, Lexington, MA ; G. W. Turner ; M. J. Manfra

Strained quantum well diode lasers consisting of compressively strained InAsSb active layers and tensile strained InAlAsSb barrier layers have exhibited CW power of 215 mW/facet at 80 K. The internal quantum efficiency and internal loss coefficient at 80 K are estimated to be 63% and 9 cm-1, respectively

Published in:

Electronics Letters  (Volume:32 ,  Issue: 14 )