Analysis of P_b centers at the Si(111)/SiO₂ interface following rapid thermal annealing

In this work, an experimental study of defects at the Si(111)/SiO₂ interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 °C is presented. From a combined analysis using electron spin resonance and quasistatic capacitance–voltage characterization, the dominant defects observed at the Si(111)/SiO₂ interface following an inert ambient RTA process are identified unequivocally as the P_b signal (interfacial Si₃Si^∙) for the oxidized Si(111) orientation. Furthermore, the P_b density inferred from electron spin resonance (7.8±1)×10¹² cm^-2, is in good agreement with the electrically active interface state density (6.7±1.7)×10¹² cm^-2 determined from analysis of the quasistatic capacitance–voltage response. © 2003 American Institute of Physics.