By Topic

Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Han, Daxing ; Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 ; Wang, Keda ; Owens, Jessica M. ; Gedvilas, L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Transition films from amorphous (a-) to microcrystalline (μc-) silicon were prepared by hot-wire chemical vapor deposition using silane decomposition with either varied hydrogen-to-silane ratio, R, or with fixed R=3 but a varied substrate temperature, Ts. Raman results indicate that there is a threshold for the structural transition from a- to μc-Si:H in both cases. The onset of the structural transition is found to be R≈2 at Ts=250 °C and Ts≈200 °C at R=3. The properties of the material were studied by infrared absorption, optical absorption, photoluminescence (PL), and conductivity temperature dependence. We observed that the peak frequency of the SiH wag mode remains at 630-640 cm-1 for all the films, but the hydrogen content shows two regimes of fast and slow decreases separated by the onset of microcrystallinity. When microcrystallinity increased, we observed that (a) the SiO vibration absorption at 750 cm-1 and 1050-1200 cm-1 appeared, (b) the relative intensity of the 2090 cm-1 absorption increased, (c) the low-energy optical absorption at photon energy ≪1.4 eV increased one to two orders of magnitude, (d) the low-energy PL band at ∼1.0 eV emerged with a decrease of total PL intensity, and (e) the conductivity activation energy decreased. The aforementioned changes correlated well with the crystallinity of the material. We attribute the observations mainly- to the formation of the c-Si gain boundaries during crystallization. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 7 )