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Band-gap bowing effects in BxGa1-xAs alloys

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10 Author(s)
Shan, W. ; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 ; Walukiewicz, W. ; Wu, J. ; Yu, K.M.
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Photomodulation spectroscopy studies of the transitions at the Γ point of the Brillouin zone of thin films of BxGa1-xAs alloys grown by metal-organic chemical-vapor deposition are presented. A very small increase of the fundamental band gap is found in samples with B content up to 3%. Under hydrostatic pressure, the band gap increases at a rate almost identical to the pressure dependence of the GaAs band gap. In contrast to the case of N incorporation at similar concentrations into GaAs, the experimental results show that B incorporation does not cause large modifications of the conduction-band structure in BxGa1-xAs alloys. © 2003 American Institute of Physics.

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Journal of Applied Physics  (Volume:93 ,  Issue: 5 )