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Single to polycrystalline transition in silicon growth by ion-assisted deposition at low temperatures

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5 Author(s)
Nerding, M. ; Universität Erlangen–Nürnberg, Institut für Werkstoffwissenschaften, Lehrstuhl für Mikrocharakterisierung, Cauerstrasse 6, D-91058 Erlangen, Germany ; Oberbeck, L. ; Wagner, T.A. ; Bergmann, R.B.
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We investigate the microstructure of thin silicon films produced at temperatures below 450 °C by ion-assisted deposition. Our transmission electron microscopy investigations show that in this temperature regime epitaxial growth breaks down at a critical film thickness beyond which the growth changes to polycrystalline or amorphous. The critical thickness increases with an increase in temperature. We use this effect that is well known from molecular beam epitaxy to analyze and quantify growth on silicon substrates with different surface normal orientations at various temperatures. Our results indicate that epitaxy works by far the best for the <001> surface normal orientation. The critical epitaxial thickness hepi decreases in the sequence hepi(001)≫hepi(113)≫hepi(011)≫hepi(111). The respective activation energies of 0.6, 2.1, 1.2, and 1.4 eV are evaluated from the temperature dependence. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 5 )

Date of Publication:

Mar 2003

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