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Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy

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7 Author(s)
Ohgaki, Takeshi ; Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanDepartment of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan ; Ohashi, Naoki ; Kakemoto, Hirofumi ; Wada, S.
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Zinc oxide (ZnO) films were grown on sapphire (112¯0) substrates by molecular beam epitaxy under oxygen radical irradiation. The effect of the growth conditions, including the Zn/O ratio supplied to the film surface, on the electrical properties of ZnO films was studied in relation to the film morphology. We found that the growth rate strongly depended on the Zn flux from the Knudsen cell and the optimum condition for high growth rate was very narrow. The grain size in the lateral direction increased with increasing growth rate in the thickness direction. The increase in growth rate, especially in the lateral direction, resulted in the carrier mobility increasing up to 42 cm2V-1s-1. The carrier concentration N was sensitive to the substrate temperature, while the value of N was not sensitive to the source supplying ratio Zn/O. We discuss the decrease of the carrier concentration with increasing substrate temperature in regard to the formation of nonequilibrium defects. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 4 )