By Topic

Structure and secondary electron emission properties of MgO films deposited by pulsed mid-frequency magnetron sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Cheng, Y.H. ; Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany ; Kupfer, H. ; Richter, F. ; Giegengack, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A pulsed mid-frequency magnetron sputtering technique was used to deposit MgO films. Atomic force microscopy, Rutherford backscattering, x-ray diffraction, and a diode discharge device were used to characterize surface morphology, oxygen content, crystalline structure, and the secondary electron emission (γ) coefficient of the films, respectively. The oxygen content (56 at. %) in all the films remained constant. However, surface morphology, crystalline structure, and the secondary electron emission properties of the films are strongly dependent on the O2 flow rate. As the O2 flow rate is increased from 3 to 10 sccm, a sudden decrease in the grain size and the γ coefficient of the films can be observed, and the crystalline orientation evolves from a strong (200) preferred orientation continuously to a fully (220) preferred orientation. Further increase of O2 flow rate results in a slight change in the grain size and the crystalline orientation, but a considerable increase in the full width at half maximum of the x-ray diffraction peaks and a significant decrease in the γ coefficient of the films. We found that preferred orientation and crystalline quality are the main factors that influence the secondary electron emission properties of the MgO films. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 3 )