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Nanoscale analysis on interfacial reactions in Al–Si–Cu alloys and Ti underlayer films

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9 Author(s)
Yang, Jun-Mo ; Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do 467-701, Korea ; Lee, Sukjae ; Park, Ju-Chul ; Lee, Deok-Won
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Solid-phase reactions at the interface between sputtered Al–Si–Cu alloys and Ti films were investigated at the atomic scale by high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy (EDS) coupled with a field-emission (scanning) transmission electron microscope. The analysis results showed that the interface is composed of an amorphous-like Ti–Si layer, an intermediate-crystalline layer, and a Si-dissolved TiAl3 layer containing dissolved Si TiAl3 with a crystallographic relationship with the Al film. The nanometer-scaled interlayers effectively play a role as a barrier suppressing the interdiffusion reaction of Al and Ti during annealing treatment. Further, the quantitative composition of the interlayers was revealed by the analysis of the intensity profiles obtained from EDS elemental maps. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 2 )

Date of Publication:

Jan 2003

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