Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

Experimental data on the low-frequency noise in GaN/AlGaN heterostructure field effect transistors show that the spectral noise density of the drain current fluctuations, S_I, close to the saturation voltage increases faster than the square of the drain voltage V_d. At drain voltages higher than the saturation voltage, S_I decreases with a further increase in drain voltage. A model of noise behavior below saturation based on the tunneling mechanism of noise is in a good agreement with the data measured. © 2003 American Institute of Physics.