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Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1574599 

Experimental data on the low-frequency noise in GaN/AlGaN heterostructure field effect transistors show that the spectral noise density of the drain current fluctuations, SI, close to the saturation voltage increases faster than the square of the drain voltage Vd. At drain voltages higher than the saturation voltage, SI decreases with a further increase in drain voltage. A model of noise behavior below saturation based on the tunneling mechanism of noise is in a good agreement with the data measured. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 12 )

Date of Publication:

Jun 2003

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