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Effect of (101¯0) crystal orientation on many-body optical gain of wurtzite InGaN/GaN quantum well

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1 Author(s)
Park, Seoung-Hwan ; Department of Physics and Semiconductor Science, Catholic University of Daegu, Hayang, Kyeongbuk 712-702, Korea

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1577402 

The optical properties of (101¯0)-oriented wurtzite (WZ) InGaN/GaN quantum well (QW) lasers are investigated using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. These results are also compared with those of (0001)-oriented WZ InGaN/GaN QW with piezoelectric and spontaneous polarizations taken into account. The optical gain of the (101¯0)-oriented QW is largely enhanced over that of the (0001)-oriented QW. This can be explained by the fact that the optical matrix elements near the band edge (k=0) of the (101¯0)-oriented InGaN/GaN QW significantly increase compared to that of the (0001)-oriented structure, in addition to the reduction of the effective mass. The threshold current density Jth of the (101¯0)-oriented QW is expected to be about half that of the (0001)-oriented QW structure. © 2003 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:93 ,  Issue: 12 )

Date of Publication: Jun 2003

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