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Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

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6 Author(s)
Park, M. ; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 ; Cuomo, J.J. ; Rodriguez, B.J. ; Yang, W.-C.
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The electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon–plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain. © 2003 American Institute of Physics.

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Journal of Applied Physics  (Volume:93 ,  Issue: 12 )