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In order to characterize various different epilayer designs for semiconductor Raman amplifier pump lasers, combined electromodulated reflectance (ER) and photoluminescence (PL) studies were performed on wafer samples of InP / InGaAsP / InGaAsP edge-emitter laser structures in the infrared spectral region. Information about the quantum well (QW) transitions is obtained primarily from the ER, with additional corroboration provided by the PL. The ER spectra are fitted with a line shape model to obtain the ground-state and higher-order QW transition energies, which are found to agree well with theoretically calculated values. The ER spectra also provide the waveguide core and barrier compositions and built-in electric fields in the laser structures. The information provided by ER studies on the prefabrication wafers is found to corroborate well with diagnostic spontaneous emission measurements performed on actual laser devices fabricated from the same wafer batches. © 2003 American Institute of Physics.