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Development and process control of magnetic tunnel junctions for magnetic random access memory devices

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5 Author(s)
Kula, Witold ; Silicon Magnetic Systems, Cypress Semiconductor, 3901 North First Street, San Jose, California 95134 ; Wolfman, Jerome ; Ounadjela, Kamel ; Chen, Eugene
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We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance ∼40% at 300 mV, resistance–area product (RA) ∼1–3 kΩ μm2, low intrinsic interlayer coupling (Hin) ∼2–3 Oe, and excellent bit switching characteristics can be developed and fully integrated with complementary metal–oxide–semiconductor circuitry into MRAM devices. MTJ uniformity and repeatability level suitable for mass production has been demonstrated with the advanced processing and monitoring techniques. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 10 )

Date of Publication:

May 2003

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