By Topic

Effect of carrier for magnetic and magnetotransport properties of Si:Ce films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yokota, T. ; Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan ; Fujimura, N. ; Wada, T. ; Hamasaki, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Epitaxial Si:Ce films with smooth surfaces were prepared by low temperature molecular beam epitaxy. Although as-deposited films showed positive magnetization due to the existence of Ce having been substituted in Si lattice, the conduction was n type. The conduction changed to p type as a result of hydrogen termination, indicating that the film had contained dangling bonds. The magnetization behavior of the as-deposited n-type sample is completely identical to that of the p-type sample. The temperature dependence of resistivity (ρ–T) for each sample with n-type or p-type conduction has a cusp at 150 K, which is related to the spin–glass transition. But the cusp observed in the ρ–T curve of the sample with n-type conduction is broader than that of the sample with p-type conduction. It seems to have originated from the spin dynamics in Si:Ce with different carrier types. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 10 )