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Effect of carrier for magnetic and magnetotransport properties of Si:Ce films

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5 Author(s)
Yokota, T. ; Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan ; Fujimura, N. ; Wada, T. ; Hamasaki, S.
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Epitaxial Si:Ce films with smooth surfaces were prepared by low temperature molecular beam epitaxy. Although as-deposited films showed positive magnetization due to the existence of Ce having been substituted in Si lattice, the conduction was n type. The conduction changed to p type as a result of hydrogen termination, indicating that the film had contained dangling bonds. The magnetization behavior of the as-deposited n-type sample is completely identical to that of the p-type sample. The temperature dependence of resistivity (ρ–T) for each sample with n-type or p-type conduction has a cusp at 150 K, which is related to the spin–glass transition. But the cusp observed in the ρ–T curve of the sample with n-type conduction is broader than that of the sample with p-type conduction. It seems to have originated from the spin dynamics in Si:Ce with different carrier types. © 2003 American Institute of Physics.

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Journal of Applied Physics  (Volume:93 ,  Issue: 10 )