Cart (Loading....) | Create Account
Close category search window
 

Evolution of vacancy ordering structures in epitaxial YbSi2-x thin films on (111) and (001)Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Chi, K.S. ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China ; Tsai, W.C. ; Chen, L.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1525064 

The evolution of vacancy ordering structures in epitaxial YbSi2-x thin films on both (111) and (001)Si has been studied by transmission electron microscopy (TEM). Epitaxial YbSi2-x thin films were grown on Si by either room temperature deposition with subsequent thermal annealing or deposition at elevated temperature. Epitaxial YbSi2-x was found to form in samples annealed at 300 °C for 30 min and the appearance of additional diffraction spots is attributed to the formation of an ordered vacancy superstructure in the epitaxial YbSi2-x thin films. In other samples, the split or streaking of extra diffraction spots is attributed to the formation of out-of-step structures. The variation of out-of-step structures with the annealing temperature is correlated to a change in vacancy concentration that makes compressive stress in the Si sublattice relax. From studying plan-view and cross-sectional TEM samples in conjunction with simulated diffraction patterns, the three-dimensional structures of vacancy ordering were determined. The vacancy ordering structures are expected to exert a strong influence on the physical properties of epitaxial rare-earth silicide nanowires grown on (001)Si. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 1 )

Date of Publication:

Jan 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.