Cart (Loading....) | Create Account
Close category search window
 

Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1524013 

The topic of extended defect structure stability in lateral epitaxial overgrowth (LEO) of GaN is addressed. We first summarize experimental results of growth morphology and dislocation structure in LEO GaN on sapphire substrates in the context of the crystallographic orientation of the stripe window openings. For <112¯0>-oriented stripes, the LEO material often exhibits a triangular cross-section morphology with inclined {101¯1} facets. The threading dislocations (TDs) propagate vertically in the window region and then become unstable and bend toward the inclined sidewalls, to eventually lie in the basal plane. In the case of <11¯00>-oriented stripes, vertical {112¯0} sidewalls may develop and, when realized, yield the lowest density of extended defects in the wing (overgrown) regions. Most of the TDs propagate vertically in the window regions and remain in loosely organized cell walls (subgrain boundaries). For this stripe orientation, a discernable crystallographic tilt of the LEO wing regions relative to the window region is also observed. This tilt is related to the appearance of edge dislocation arrays in the transition region between windows and wings. To understand the growth of dislocation-free wing regions, we present a model for dislocation subboundary cell structure stability during lateral overgrowth. The model provides a relation between structural parameters (such as cell size and misorientation) under which lateral defect-free growth is energetically favorable. © 2003 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:93 ,  Issue: 1 )

Date of Publication:

Jan 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.