Cart (Loading....) | Create Account
Close category search window

Regrowth of high-quality Al0.3Ga0.7As/GaAs superlattices on laterally oxidized digital AlxGa1-xAs (x≫0.80) alloys

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Digital AlxGa1-xAs alloys consisting of a repeated structure of alternating layers of AlAs and GaAs were grown between layers of GaAs. Lateral oxidation characteristics of these digital AlxGa1-xAs (x≫0.8) alloys were determined. Decreasing aluminum compositions resulted in slower oxidation rates, similar to true AlxGa1-xAs alloys. Further investigations of the oxidation characteristics of a digital Al0.98Ga0.02As alloy indicate that shorter periods (24.5 monolayers (ML) AlAs/0.5 ML GaAs) showed slower oxidation rates than the longer period alloys (49 ML AlAs/1 ML GaAs or 98 ML AlAs/2 ML GaAs). As the GaAs layers become closer together (that is a digital alloy with a shorter period), the material more closely resembles a true alloy showing slower oxidation rates. Regrowth of an Al0.3Ga0.7As/GaAs superlattice on the laterally oxidized samples, capped with a thin GaAs layer, was performed. The high-temperature regrowth process caused delamination problems for the oxidized conventional AlAs material, resulting in a rough surface morphology causing a decrease in photoluminescence (PL) intensity. Oxidized digital alloys allowed for a large increase in useable surface area and higher PL intensities, indicating the superiority of the digital AlxGa1-xAs alloys for regrowth applications. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 9 )

Date of Publication:

Nov 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.