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Far-infrared laser-induced hot-carrier impact ionization photovoltaic effect in silicon junctions: Lattice temperature dependence

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3 Author(s)
Encinas-Sanz, F. ; Departamento de Óptica, Facultad de Ciencias Físicas, Universidad Complutense, 28040 Madrid, Spain ; Marı n, M. ; Guerra, J.M.

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An experimental study has been carried out on the dependence of the hot-carrier highly nonlinear photovoltaic effect induced in silicon n+/p junctions by 10.6 μm laser pulses on the lattice temperature. A four orders of magnitude increase in the photovoltage was observed for a lattice temperature increase of 150 K. A model based on the hot-carrier plasma generated by the laser radiation fit the experimental results. Sensitivity can possibly be further improved by increasing the junction temperature. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 9 )