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Combined effects of argon addition and substrate bias on the formation of nanocrystalline diamond films by chemical vapor deposition

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4 Author(s)
Yang, Tien-Syh ; Department of Materials Science and Engineering, National Dong Hwa University, Hualien, Taiwan, Republic of China ; Lai, Jir-Yon ; Wong, Ming‐Show ; Cheng, Chia-Liang

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The article reports combined effects of Ar addition and substrate bias on the grain size, microstructure, and growth rate of the diamond films prepared in microwave plasma-enhanced chemical vapor deposition. The nanocrystalline diamond (NCD) films with grain size of 50–100 nm, characterized by Raman spectra, scanning and transmission electron microscopy, were produced at 90–99 vol % Ar concentration under -50 V substrate biasing. The growth rate of the NCD films was 0.7–0.8 μm h-1, larger apparently than those grown by only Ar addition or by substrate bias effect alone. The NCD formation by various mechanisms is discussed, and a revised C2 insertion mechanism by the promotion of H+ ions is proposed to interpret the higher growth rate of the NCD films. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 9 )

Date of Publication:

Nov 2002

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