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Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

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6 Author(s)
Skowronski, M. ; Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 ; Liu, J.Q. ; Vetter, W.M. ; Dudley, M.
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The generation and evolution of defects in 4H–SiC p-n junctions due to carrier injection under forward bias have been investigated by synchrotron white beam x-ray topography, electroluminescence imaging, and KOH etching. The defects are Shockley stacking faults with rhombic or triangular shapes bound by partial dislocation loops with dislocation lines along Peierls valleys (<11-20>) or along the intersection of the basal plane containing the fault and diode surface. The Burgers vector of all bounding partials was of 1/3<10-10>-type. Among six possible types of partial dislocations with these properties, only two were observed in the volume of the epitaxial structure. One was tentatively identified as 30° carbon-core [C(g) 30°] and second as 30° silicon-core [Si(g) 30°] partial dislocation. Only one of them [proposed to be the Si(g) 30° partial] have been observed to move and emit light under forward bias. The other type of bounding dislocation [C(g) 30°] remained stationary during current injection. Low angle grain boundaries have been observed to act as one of a number of possible nucleation sites of stacking faults. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 8 )

Date of Publication:

Oct 2002

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