By Topic

Epitaxial growth of BaTiO3/SrTiO3 structures on SrTiO3 substrate with automatic feeding of oxygen from the substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Shimoyama, K. ; Institute of Applied PhysicsCenter for TARA, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan ; Kiyohara, Masahiro ; Kubo, Kousuke ; Uedono, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Thin films of BaTiO3 and SrTiO3 and their superlattice were grown on SrTiO3 substrates using oxygen from the substrates as an oxygen source. Epitaxial growths were carried out by coevaporations of the component metals under ultrahigh vacuum without introducing any oxidants. The growth mechanism in the extremely low oxidation ambient was studied. Oxygen was automatically fed from the substrate to the growing film surface. As a result, oxygen vacancies were incorporated deep into the inside of the SrTiO3 substrate, confirmed by means of positron annihilation. The local oxygen deficiency at the growing surface is buffered by the fast diffusion of incorporated oxygen vacancies into deep inside of the substrate, avoiding decomposition or nucleation of the metallic phases on the surface. The BaTiO3/SrTiO3 interfaces were formed without intermixing, despite considerable amounts of oxygen having moved through the interfaces. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 8 )