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Structural and electrical properties of homologous Srm-3Bi4TimO3m+3 (m=3, 4, 5, and 6) thin films

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8 Author(s)
Zhang, S.T. ; National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China ; Yang, B. ; Webb, J.F. ; Chen, Y.F.
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Polycrystalline thin films of Bi-layered Srm-3Bi4TimO3m+3 (referred to as BTO for m=3 and SBTim for m=4,5, and 6 respectively) were fabricated on Pt-coated silicon substrates by pulsed laser deposition. Structures were characterized by x-ray diffraction, atomic force microscopy, and scanning electron microscopy. Electric properties were investigated systematically. It was revealed that the remnant polarization Pr depended greatly on the parity of m. This dependence was well explained by using a rotating oxygen octahedra model along the a axis. The superior fatigue properties of SBTim (m=4,5,6) over BTO films were discussed in detail. The high dielectric constants and low dissipation factors of the films were demonstrated. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 8 )