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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:92 Issue:8 Help

Electrical isolation of InGaP by proton and helium ion irradiation

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5 Author(s)
Danilov, I. ; Instituto de Fı´sica, UFRGS, 91501-970 Porto Alegre, RS, Brazil ; de Souza, J.P. ; Boudinov, H. ; Bettini, J.
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Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/◻. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is ≅500 °C. © 2002 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:92 ,  Issue: 8 )

Date of Publication: Oct 2002

Page(s):
4261 - 4265
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1506200
Date of Current Version :
18 June 2009
Issue Date :
Oct 2002

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