Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1506191
The role of annealing for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (100) during growth of (In,Ga)As/GaAs superlattice (SL) structures is studied by x-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectroscopy. XRD and AFM evidence that annealing after the supply of each layer of elongated (In,Ga)As quantum dots (QDs) in the SL is the crucial process for QWR formation. We conclude that during annealing, the shape anisotropy of the QDs is enhanced due to anisotropic mass transport and the QDs become connected along the [0-11] direction. Strain reduction by In desorption, revealed by XRD and PL, which accompanies this process, then results in well defined, uniform QWR arrays by repetition in SL growth. © 2002 American Institute of Physics.
Published in:
Journal of Applied Physics
(Volume:92
,
Issue:
7
)
Date of Publication: Oct 2002
- Page(s):
- 4043 - 4046
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.1506191
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Oct 2002
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
