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Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures

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9 Author(s)
Mosca, D.H. ; Departamento de Fı´sica—UFPR, Centro Politécnico C. P. 19091, 81531-990 Curitiba PR, Brazil ; Schreiner, W.H. ; Kakuno, E.M. ; Mazzaro, I.
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The thermal evolution of a ZnSe epilayer grown by molecular beam epitaxy on GaAs(001) has been studied by high resolution x-ray diffraction as well as photoelectron and Raman spectroscopies. Sequential annealing of a relaxed epilayer reveals a fast migration of Ga towards the ZnSe cap layer with a significant accumulation of As atoms near the ZnSe-reacted interface. A Ga2Se3 compound appears as a predominant byproduct whereas Zn atoms are probably diffusing from the reacted interface into the GaAs substrate. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 7 )

Date of Publication:

Oct 2002

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