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Atomic force microscopy study of surface roughening of sputter-deposited TiN thin films

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4 Author(s)
Liu, Z.-J. ; Department of Manufacturing Engineering & Engineering Management, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong ; Jiang, N. ; Shen, Y.G. ; Mai, Y.-W.

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The kinetic surface roughening of TiN thin films sputter-deposited on silicon substrates at room temperature was studied. Scaling analyses were made by surface measurements of atomic force microscopy (AFM). The roughness exponent α and growth exponent β that characterize scaling behaviors of surface growth were calculated using the height–height correlation function H(r) and power spectra P(f). The exponent values of α=∼0.98 and β=∼0.28 indicated that the surface growth behavior of sputtered TiN thin films could be adequately explained by a simple linear growth model showing surface diffusion as a smoothing effect and shot noise as a roughening mechanism. An inverse Fourier transformation technique was also used to generate the evolution of theoretical surface profiles that showed good agreement with AFM measurements. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 7 )

Date of Publication:

Oct 2002

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