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A ±100 V square wave applied to a Au/semi-insulating SI–GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2
Published in:
Journal of Applied Physics
(Volume:92
,
Issue:
6
)
Date of Publication: Sep 2002
- Page(s):
- 3410 - 3412
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.1503162
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Sep 2002
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