Cart (Loading....) | Create Account
Close category search window

Current–voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Oh, Jaehwan ; Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 ; Nemanich, R.J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Using conducting tip atomic force microscopy (c-AFM), we have measured the current–voltage (I–V) characteristics of individual submicron islands of TiSi2 on Si(100) surfaces, and we have developed an imaging approach that distinguishes the electrical properties of the islands. The Schottky barrier height (SBH) of the submicron TiSi2 islands was deduced from the I–V measurements. The results indicate that there is a significant variation of SBH among the islands on the same surface. The measurements employ a conventional AFM with a heavily B-doped diamond tip to obtain the current–voltage relations. In contact mode AFM, electrical signals are extracted independently from the topographic image. In addition, we have modified the imaging method to probe the local electrical properties of a surface with regions of different conductivity. Using a lock-in technique both phase and amplitude images were obtained, and the resultant image is essentially a map of the differential surface conductivity. Using this method, TiSi2 islands on a Si(100) surface were imaged. This approach can be readily extended to other materials systems. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 6 )

Date of Publication:

Sep 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.